Paper Title
CAM Cell Based Memory Architecture For Extreme Searching Operations
Abstract
This paper discusses about content addressable memory (CAM) architecture based on different device
technologies. The paper explains about the Magnetic Content Accessible Memory using magnetic tunneling junctions
(MTJs) which has an advantage of parallelism in its architecture. A memory structure like SRAM or DRAM arrays store the
address and retrieve the required data by giving the complete address. Whereas in CAM based architecture, we can access
the information stored by giving the key (either full data or part of the data) as an input, rather than an address. Here we
explain about magnetic tunneling junction (MTJ) based CAM architecture which can handle both searching and storing the
data using content addressable memory architecture where we can replace a single MTJ in place of more than 8 CMOS
transistors.
Keywords- Associative memories, magnetic memories, memory array.